ipb17n25s3-100 ipp17n25s3-100 optimos ? -t power-transistor features ? n-channel - enhancement mode ? aec qualified ? msl1 up to 260c peak reflow ? 175c operating temperature ? green product (rohs compliant) ? 100% avalanche tested maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c, v gs =10 v 17 a t c =100c, v gs =10v 1) 13.3 pulsed drain current 1) i d,pulse t c =25c 68 avalanche energy, single pulse 1) e as i d =5.4a 54 mj avalanche current, single pulse i as - 5.4 a reverse diode d v /d t d v /d t- 6kv/s gate source voltage v gs -20v power dissipation p tot t c =25c 107 w operating and storage temperature t j , t stg - -55 ... +175 c iec climatic category; din iec 68-1 - - 55/175/56 value v ds 250 v r ds(on),max 100 m i d 17 a product summary pg-to220-3-1 pg-to263-3-2 type package marking ipb17n25s3-100 pg-to263-3-2 3n25100 ipp17n25s3-100 pg-to220-3-1 3n25100 r ev. 1.1 page 1 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 parameter symbol conditions unit min. typ. max. thermal characteristics 1) thermal resistance, junction - case r thjc ---1.4k/w thermal resistance, junction - ambient, leaded r thja ---62 smd version, device on pcb r thja minimal footprint - - 62 6 cm 2 cooling area 2) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0v, i d = 1ma 250 - - v gate threshold voltage v gs(th) v ds = v gs , i d =54a 2.0 3.0 4.0 zero gate voltage drain current i dss v ds =250v, v gs =0v -0.011a v ds =250v, v gs =0v, t j =125c 2) - 1 100 gate-source leakage current i gss v gs =20v, v ds =0v - 10 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =17a - 85 100 m values r ev. 1.1 page 2 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 parameter symbol conditions unit min. typ. max. d y namic characteristics 1) input capacitance c iss - 1133 1500 pf output capacitance c oss - 480 625 reverse transfer capacitance c rss -1123 turn-on delay time t d(on) -4.4-ns rise time t r -3.7- turn-off delay time t d(off) -7.5- fall time t f -1.2- gate char g e characteristics 1), 3) gate to source charge q gs -57nc gate to drain charge q gd -2.44.8 gate charge total q g -1419 gate plateau voltage v plateau -4.6-v reverse diode diode continous forward current 1) i s --17a diode pulse current 1) i s,pulse --56 diode forward voltage v sd v gs =0v, i f =17a, t j =25c -0.91.3v reverse recovery time 1) t rr v r =125v, i f =17a, d i f /d t =100a/s - 120 - ns reverse recovery charge 1) q rr - 525 - nc values v gs =0v, v ds =25v, f =1mhz v dd =125v, v gs =10v, i d =17a, r g =3.3 v dd =200v, i d =17a, v gs =0 to 10v 3) devices thermal performance determined according to eia jesd 51-14 "transient dual interface test method for the measurement of the thermal resistance" 1) defined by design. not subject to production test. t c =25c 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. r ev. 1.1 page 3 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 1 power dissipation 2 drain current p tot = f( t c ); v gs 6 v i d = f( t c ); v gs 6 v; smd 3 safe operating area 4 max. transient thermal impedance i d = f( v ds ); t c = 25 c; d = 0; smd z thjc = f( t p ) parameter: t p parameter: d = t p / t 1 s 10 s 100 s 1 ms 0.1 1 10 100 0.1 1 10 100 1000 i d [a] v ds [v] single pulse 0.01 0.05 0.1 0.5 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] 0 25 50 75 100 125 0 50 100 150 200 p tot [w] t c [ c] 0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200 i d [a] t c [ c] r ev. 1.1 page 4 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 5 typ. output characteristics 6 typ. drain-source on-state resistance i d = f( v ds ); t j = 25 c; smd r ds(on) = f( i d ); t j = 25 c; smd parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. drain-source on-state resistance i d = f( v gs ); v ds = 25v r ds(on) = f( t j ); i d = 17 a; v gs = 10 v; smd parameter: t j 0 50 100 150 200 250 300 -60 -20 20 60 100 140 180 r ds(on) [m ] t j [ c] 5 v 5.5 v 10 v 0 17 34 51 68 0 6 12 18 24 30 i d [a] v ds [v] 5v 5.5 v 10 v 0 100 200 300 400 500 0 17345168 r ds(on) [m ] i d [a] -55 c 25 c 175 c 0 20 40 60 3456 i d [a] v gs [v] r ev. 1.1 page 5 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 9 typ. gate threshold voltage 10 typ. capacitances v gs(th) = f( t j ); v gs = v ds c = f( v ds ); v gs = 0 v; f = 1 mhz parameter: i d 11 typical forward diode characteristicis 12 avalanche characteristics if = f(v sd ) i a s = f( t av ) parameter: t j parameter: t j(start) 25 c 175 c 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] 54 a 540 a 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] ciss coss crss 10 2 10 3 10 4 0 5 10 15 20 25 30 c [pf] v ds [v] 10 1 25 c 100 c 150 c 0.1 1 10 100 0.1 1 10 100 1000 10000 i av [a] t av [s] 25 c 175 c 10 0 10 1 10 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 i f [a] v sd [v] r ev. 1.1 page 6 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 13 avalanche energy 14 drain-source breakdown voltage e as = f( t j ) v br(dss) = f( t j ); i d = 1 ma parameter: i d 15 typ. gate charge 16 gate charge waveforms v gs = f( q gate ); i d = 17 a pulsed parameter: v dd v gs q gate v gs(th) q g(th) q gs q gd q sw q g 200 220 240 260 280 300 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 50 v 200 v 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 v gs [v] q gate [nc] 5.4 a 2.7 a 1.35 a 0 50 100 150 200 250 25 75 125 175 e as [mj] t j [ c] r ev. 1.1 page 7 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2012 all rights reserved. legal disclaime r the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the applicat ion of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. r ev. 1.1 page 8 2013-05-13
ipb17n25s3-100 ipp17n25s3-100 revision history version revision 1.0 revision 1.1 final data sheet changes update of diagram 5 and 6 12.05.2013 date 18.10.2012 r ev. 1.1 page 9 2013-05-13
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